Pressure dependence of Schottky barrier height at the Pt/GaAs interface
نویسندگان
چکیده
منابع مشابه
Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions.
Graphene (Gr) interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer Gr onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by curre...
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The theory of tunnel current-voltage (I-V ) characteristics of metal-semiconductor junctions based on the self-consistent solution of Poisson equation allows to get the Schottky-barrier height and the charged impurity concentration directly from the tunneling data. This approach was applied to the analysis of the low temperature experiments on tunneling under pressure up to 3GPa in a piston-cyl...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1988
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.100045